NSVMMBT589LT1G Overview
DC current gain in this device equals 100 @ 500mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 200mA, 2A.In this part, there is a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
NSVMMBT589LT1G Features
the DC current gain for this device is 100 @ 500mA 2V
the vce saturation(Max) is 650mV @ 200mA, 2A
a transition frequency of 100MHz
NSVMMBT589LT1G Applications
There are a lot of ON Semiconductor NSVMMBT589LT1G applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
