BUJ303B,127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website
SOT-23
BUJ303B,127 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Reference Standard
IEC-134
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
100W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
23 @ 800mA 3V
Current - Collector Cutoff (Max)
100μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1A, 3A
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
5A
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
5,000
$0.31185
$1.55925
BUJ303B,127 Product Details
BUJ303B,127 Overview
DC current gain in this device equals 23 @ 800mA 3V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 1.5V @ 1A, 3A means Ic has reached its maximum value(saturated).Single BJT transistor shows a 400V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
BUJ303B,127 Features
the DC current gain for this device is 23 @ 800mA 3V the vce saturation(Max) is 1.5V @ 1A, 3A
BUJ303B,127 Applications
There are a lot of WeEn Semiconductors BUJ303B,127 applications of single BJT transistors.