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BUJ303B,127

BUJ303B,127

BUJ303B,127

WeEn Semiconductors

BUJ303B,127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

BUJ303B,127 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface MountNO
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTube
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Reference Standard IEC-134
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 100W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 23 @ 800mA 3V
Current - Collector Cutoff (Max) 100μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1A, 3A
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 5A
RoHS StatusRoHS Compliant
In-Stock:21824 items

Pricing & Ordering

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BUJ303B,127 Product Details

BUJ303B,127 Overview


DC current gain in this device equals 23 @ 800mA 3V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 1.5V @ 1A, 3A means Ic has reached its maximum value(saturated).Single BJT transistor shows a 400V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

BUJ303B,127 Features


the DC current gain for this device is 23 @ 800mA 3V
the vce saturation(Max) is 1.5V @ 1A, 3A

BUJ303B,127 Applications


There are a lot of WeEn Semiconductors BUJ303B,127 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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