KSC1623YMTF Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 135 @ 1mA 6V DC current gain.This system offers maximum design flexibility due to a collector emitter saturation voltage of 150mV.When VCE saturation is 300mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at 5V to gain high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Input voltage breakdown is available at 50V volts.During maximum operation, collector current can be as low as 100mA volts.

KSC1623YMTF Features

the DC current gain for this device is 135 @ 1mA 6V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 250MHz

KSC1623YMTF Applications

There are a lot of ON Semiconductor KSC1623YMTF applications of single BJT transistors.

• Driver
• Muting
• Inverter
• Interface