2SC5994-TD-E Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 135mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 6V can result in a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 420MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

2SC5994-TD-E Features

the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 135mV
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 420MHz

2SC5994-TD-E Applications

There are a lot of ON Semiconductor 2SC5994-TD-E applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting