NSVBC817-40WT1G Overview
DC current gain in this device equals 250 @ 100mA 1V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).100MHz is present in the transition frequency.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.
NSVBC817-40WT1G Features
the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 100MHz
NSVBC817-40WT1G Applications
There are a lot of ON Semiconductor NSVBC817-40WT1G applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
