2SA1774EBTLR Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 1mA 6V.A collector emitter saturation voltage of -500mV ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 5mA, 50mA.For high efficiency, the continuous collector voltage must be kept at -150mA.The emitter base voltage can be kept at -6V for high efficiency.This device can take an input voltage of 50V volts before it breaks down.The maximum collector current is 150mA volts.
2SA1774EBTLR Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -6V
2SA1774EBTLR Applications
There are a lot of ROHM Semiconductor 2SA1774EBTLR applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
