MMBTA44-G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Comchip Technology stock available on our website
SOT-23
MMBTA44-G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2014
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Max Power Dissipation
350mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Configuration
SINGLE
Power - Max
350mW
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
750mV
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 10mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
750mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
400V
Max Breakdown Voltage
400V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.061800
$0.0618
500
$0.045441
$22.7205
1000
$0.037868
$37.868
2000
$0.034741
$69.482
5000
$0.032468
$162.34
10000
$0.030203
$302.03
15000
$0.029210
$438.15
50000
$0.028722
$1436.1
MMBTA44-G Product Details
MMBTA44-G Overview
This device has a DC current gain of 50 @ 10mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 750mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).There is a breakdown input voltage of 400V volts that it can take.In extreme cases, the collector current can be as low as 200mA volts.
MMBTA44-G Features
the DC current gain for this device is 50 @ 10mA 10V the vce saturation(Max) is 750mV @ 5mA, 50mA
MMBTA44-G Applications
There are a lot of Comchip Technology MMBTA44-G applications of single BJT transistors.