MMBTA56-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
MMBTA56-7-F Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Voltage - Rated DC
-80V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-100mA
Frequency
50MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MMBTA56
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Transistor Application
SWITCHING
Gain Bandwidth Product
50MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
-250mV
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
4V
hFE Min
100
Continuous Collector Current
-500mA
Height
1mm
Length
3.05mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
MMBTA56-7-F Product Details
MMBTA56-7-F Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 1V.The collector emitter saturation voltage is -250mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is essential to maintain the continuous collector voltage at -500mA to achieve high efficiency.With the emitter base voltage set at 4V, an efficient operation can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.As a result, the part has a transition frequency of 50MHz.Input voltage breakdown is available at 80V volts.Collector current can be as low as 500mA volts at its maximum.
MMBTA56-7-F Features
the DC current gain for this device is 100 @ 100mA 1V a collector emitter saturation voltage of -250mV the vce saturation(Max) is 250mV @ 10mA, 100mA the emitter base voltage is kept at 4V the current rating of this device is -100mA a transition frequency of 50MHz
MMBTA56-7-F Applications
There are a lot of Diodes Incorporated MMBTA56-7-F applications of single BJT transistors.