2DA1797-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
2DA1797-13 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Type
General Purpose
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
2W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
160MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2DA1797
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Power - Max
900mW
Transistor Application
SWITCHING
Gain Bandwidth Product
160MHz
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
82 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
350mV @ 50mA, 1A
Collector Emitter Breakdown Voltage
50V
Transition Frequency
160MHz
Collector Emitter Saturation Voltage
-100mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
6V
hFE Min
82
Height
1.5mm
Length
4.5mm
Width
2.5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.071198
$0.071198
10
$0.067168
$0.67168
100
$0.063366
$6.3366
500
$0.059779
$29.8895
1000
$0.056396
$56.396
2DA1797-13 Product Details
2DA1797-13 Overview
DC current gain in this device equals 82 @ 500mA 2V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of -100mV, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.As you can see, the part has a transition frequency of 160MHz.This device can take an input voltage of 50V volts before it breaks down.During maximum operation, collector current can be as low as 3A volts.
2DA1797-13 Features
the DC current gain for this device is 82 @ 500mA 2V a collector emitter saturation voltage of -100mV the vce saturation(Max) is 350mV @ 50mA, 1A the emitter base voltage is kept at 6V a transition frequency of 160MHz
2DA1797-13 Applications
There are a lot of Diodes Incorporated 2DA1797-13 applications of single BJT transistors.