2DA1971-7 Overview

In this device, the DC current gain is 140 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -400mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 40mA, 200mA.Single BJT transistor is recommended to keep the continuous collector voltage at -500mA in order to achieve high efficiency.Keeping the emitter base voltage at -7V allows for a high level of efficiency.A transition frequency of 75MHz is present in the part.This device can take an input voltage of 400V volts before it breaks down.Maximum collector currents can be below 500mA volts.

2DA1971-7 Features

the DC current gain for this device is 140 @ 100mA 5V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 40mA, 200mA
the emitter base voltage is kept at -7V
a transition frequency of 75MHz

2DA1971-7 Applications

There are a lot of Diodes Incorporated 2DA1971-7 applications of single BJT transistors.

• Driver
• Interface
• Inverter
• Muting