BCW68HE6327HTSA1 Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 100mA 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.The emitter base voltage can be kept at 2V for high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -800mA.Parts of this part have transition frequencies of 200MHz.There is a breakdown input voltage of 45V volts that it can take.Maximum collector currents can be below 800mA volts.

BCW68HE6327HTSA1 Features

the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 2V
the current rating of this device is -800mA
a transition frequency of 200MHz

BCW68HE6327HTSA1 Applications

There are a lot of Infineon Technologies BCW68HE6327HTSA1 applications of single BJT transistors.

• Driver
• Inverter
• Interface
• Muting