PBSS302ND,115 Overview

In this device, the DC current gain is 250 @ 2A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 450mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 450mV @ 600mA, 6A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Input voltage breakdown is available at 40V volts.In extreme cases, the collector current can be as low as 4A volts.

PBSS302ND,115 Features

the DC current gain for this device is 250 @ 2A 2V
a collector emitter saturation voltage of 450mV
the vce saturation(Max) is 450mV @ 600mA, 6A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz

PBSS302ND,115 Applications

There are a lot of Nexperia USA Inc. PBSS302ND,115 applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter