PZT2222AT3G Overview

This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.A VCE saturation (Max) of 1V @ 50mA, 500mA means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at 6V for high efficiency.Its current rating is 600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As you can see, the part has a transition frequency of 300MHz.There is a breakdown input voltage of 40V volts that it can take.In extreme cases, the collector current can be as low as 600mA volts.

PZT2222AT3G Features

the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 300MHz

PZT2222AT3G Applications

There are a lot of ON Semiconductor PZT2222AT3G applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting