2SD2653KT146 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SD2653KT146 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
1998
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Voltage - Rated DC
12V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
2A
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SD2653
Pin Count
3
Number of Elements
1
Element Configuration
Single
Transistor Application
AMPLIFIER
Gain Bandwidth Product
360MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
12V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 200mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
180mV @ 50mA, 1A
Collector Emitter Breakdown Voltage
12V
Max Frequency
100MHz
Transition Frequency
360MHz
Collector Emitter Saturation Voltage
90mV
Max Breakdown Voltage
12V
Collector Base Voltage (VCBO)
15V
Emitter Base Voltage (VEBO)
6V
hFE Min
270
Continuous Collector Current
2A
Height
1mm
Length
2.9mm
Width
1.6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.037862
$0.037862
500
$0.027840
$13.92
1000
$0.023200
$23.2
2000
$0.021284
$42.568
5000
$0.019892
$99.46
10000
$0.018504
$185.04
15000
$0.017896
$268.44
50000
$0.017597
$879.85
2SD2653KT146 Product Details
2SD2653KT146 Overview
In this device, the DC current gain is 270 @ 200mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 90mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 2A is necessary for high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 2A.A transition frequency of 360MHz is present in the part.Input voltage breakdown is available at 12V volts.A maximum collector current of 2A volts can be achieved.
2SD2653KT146 Features
the DC current gain for this device is 270 @ 200mA 2V a collector emitter saturation voltage of 90mV the vce saturation(Max) is 180mV @ 50mA, 1A the emitter base voltage is kept at 6V the current rating of this device is 2A a transition frequency of 360MHz
2SD2653KT146 Applications
There are a lot of ROHM Semiconductor 2SD2653KT146 applications of single BJT transistors.