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2DB1119S-13

2DB1119S-13

2DB1119S-13

Diodes Incorporated

2DB1119S-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

2DB1119S-13 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 51.993025mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 200MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count 4
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 50mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 25V
Transition Frequency 200MHz
Collector Base Voltage (VCBO) 25V
Emitter Base Voltage (VEBO) 5V
Height 1.5mm
Length 4.5mm
Width 2.5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.294171 $0.294171
10 $0.277520 $2.7752
100 $0.261811 $26.1811
500 $0.246992 $123.496
1000 $0.233011 $233.011
2DB1119S-13 Product Details

2DB1119S-13 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 140 @ 50mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.There is a transition frequency of 200MHz in the part.Maximum collector currents can be below 1A volts.

2DB1119S-13 Features


the DC current gain for this device is 140 @ 50mA 2V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz

2DB1119S-13 Applications


There are a lot of Diodes Incorporated 2DB1119S-13 applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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