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2DB1119S-13

2DB1119S-13

2DB1119S-13

Diodes Incorporated

2DB1119S-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

2DB1119S-13 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 51.993025mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation1W
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Frequency 200MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count4
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 50mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage25V
Transition Frequency 200MHz
Collector Base Voltage (VCBO) 25V
Emitter Base Voltage (VEBO) 5V
Height 1.5mm
Length 4.5mm
Width 2.5mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:1881 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.294171$0.294171
10$0.277520$2.7752
100$0.261811$26.1811
500$0.246992$123.496
1000$0.233011$233.011

2DB1119S-13 Product Details

2DB1119S-13 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 140 @ 50mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.There is a transition frequency of 200MHz in the part.Maximum collector currents can be below 1A volts.

2DB1119S-13 Features


the DC current gain for this device is 140 @ 50mA 2V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz

2DB1119S-13 Applications


There are a lot of Diodes Incorporated 2DB1119S-13 applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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