2DB1188Q-13 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 500mA 3V.A collector emitter saturation voltage of -800mV allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 800mV @ 200mA, 2A.With the emitter base voltage set at -5V, an efficient operation can be achieved.There is a transition frequency of 120MHz in the part.Breakdown input voltage is 32V volts.Maximum collector currents can be below 2A volts.
2DB1188Q-13 Features
the DC current gain for this device is 120 @ 500mA 3V
a collector emitter saturation voltage of -800mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at -5V
a transition frequency of 120MHz
2DB1188Q-13 Applications
There are a lot of Diodes Incorporated 2DB1188Q-13 applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
