ST13003N datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
ST13003N Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
20W
Terminal Position
SINGLE
Base Part Number
ST13003
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Power Dissipation
20W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
5 @ 1A 10V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 330mA, 1A
Collector Emitter Breakdown Voltage
400V
Emitter Base Voltage (VEBO)
9V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.032326
$1.032326
10
$0.973893
$9.73893
100
$0.918767
$91.8767
500
$0.866761
$433.3805
1000
$0.817699
$817.699
ST13003N Product Details
ST13003N Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 5 @ 1A 10V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.2V @ 330mA, 1A.Keeping the emitter base voltage at 9V allows for a high level of efficiency.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
ST13003N Features
the DC current gain for this device is 5 @ 1A 10V the vce saturation(Max) is 1.2V @ 330mA, 1A the emitter base voltage is kept at 9V
ST13003N Applications
There are a lot of STMicroelectronics ST13003N applications of single BJT transistors.