CP127-2N6301-CT5 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
CP127-2N6301-CT5 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Operating Temperature
-65°C~200°C TJ
Packaging
Tray
Published
2013
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
3V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 4A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
3V @ 80mA, 8A
Collector Emitter Breakdown Voltage
80V
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
8A
Frequency - Transition
4MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$75.850571
$75.850571
10
$71.557143
$715.57143
100
$67.506738
$6750.6738
500
$63.685603
$31842.8015
1000
$60.080757
$60080.757
CP127-2N6301-CT5 Product Details
CP127-2N6301-CT5 Overview
This device has a DC current gain of 750 @ 4A 3V, which is the ratio between the collector current and the base current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 80mA, 8A.Single BJT transistor comes in a supplier device package of Die.The device has a 80V maximal voltage - Collector Emitter Breakdown.Collector current can be as low as 8A volts at its maximum.
CP127-2N6301-CT5 Features
the DC current gain for this device is 750 @ 4A 3V the vce saturation(Max) is 3V @ 80mA, 8A the supplier device package of Die
CP127-2N6301-CT5 Applications
There are a lot of Central Semiconductor Corp CP127-2N6301-CT5 applications of single BJT transistors.