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CP127-2N6301-CT5

CP127-2N6301-CT5

CP127-2N6301-CT5

Central Semiconductor Corp

CP127-2N6301-CT5 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

CP127-2N6301-CT5 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature-65°C~200°C TJ
PackagingTray
Published 2013
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 3V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 4A 3V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 3V @ 80mA, 8A
Collector Emitter Breakdown Voltage80V
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 8A
Frequency - Transition 4MHz
RoHS StatusROHS3 Compliant
In-Stock:119 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$75.850571$75.850571
10$71.557143$715.57143
100$67.506738$6750.6738
500$63.685603$31842.8015
1000$60.080757$60080.757

CP127-2N6301-CT5 Product Details

CP127-2N6301-CT5 Overview


This device has a DC current gain of 750 @ 4A 3V, which is the ratio between the collector current and the base current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 80mA, 8A.Single BJT transistor comes in a supplier device package of Die.The device has a 80V maximal voltage - Collector Emitter Breakdown.Collector current can be as low as 8A volts at its maximum.

CP127-2N6301-CT5 Features


the DC current gain for this device is 750 @ 4A 3V
the vce saturation(Max) is 3V @ 80mA, 8A
the supplier device package of Die

CP127-2N6301-CT5 Applications


There are a lot of Central Semiconductor Corp CP127-2N6301-CT5 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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