MJD45H11RLG Overview
This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 400mA, 8A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.This device has a current rating of -8A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.There is a transition frequency of 90MHz in the part.There is a breakdown input voltage of 80V volts that it can take.A maximum collector current of 8A volts is possible.
MJD45H11RLG Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 90MHz
MJD45H11RLG Applications
There are a lot of ON Semiconductor MJD45H11RLG applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
