MSB92ASWT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 1mA 10V.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.50MHz is present in the transition frequency.Breakdown input voltage is 300V volts.A maximum collector current of 500mA volts can be achieved.
MSB92ASWT1G Features
the DC current gain for this device is 120 @ 1mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
MSB92ASWT1G Applications
There are a lot of ON Semiconductor MSB92ASWT1G applications of single BJT transistors.
- Muting
-
- Inverter
-
- Interface
-
- Driver
-
