2DD1664Q-13 Overview

This device has a DC current gain of 120 @ 100mA 3V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 50mA, 500mA.Emitter base voltages of 5V can achieve high levels of efficiency.As a result, the part has a transition frequency of 280MHz.Single BJT transistor can take a breakdown input voltage of 32V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.

2DD1664Q-13 Features

the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 280MHz

2DD1664Q-13 Applications

There are a lot of Diodes Incorporated 2DD1664Q-13 applications of single BJT transistors.

• Driver
• Inverter
• Interface
• Muting