BC817-25W-7 Overview
DC current gain in this device equals 160 @ 100mA 1V, which is the ratio of the base current to the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.In the part, the transition frequency is 100MHz.This device can take an input voltage of 45V volts before it breaks down.In extreme cases, the collector current can be as low as 500mA volts.
BC817-25W-7 Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC817-25W-7 Applications
There are a lot of Diodes Incorporated BC817-25W-7 applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
