MMSTA28T146 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
MMSTA28T146 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
STA28
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
AMPLIFIER
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
300mA
DC Current Gain (hFE) (Min) @ Ic, Vce
10000 @ 100mA 5V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage
80V
Transition Frequency
200MHz
Max Breakdown Voltage
80V
Frequency - Transition
200MHz
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
12V
hFE Min
10000
VCEsat-Max
1.5 V
Collector-Base Capacitance-Max
8pF
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.243776
$0.243776
10
$0.229978
$2.29978
100
$0.216960
$21.696
500
$0.204679
$102.3395
1000
$0.193094
$193.094
MMSTA28T146 Product Details
MMSTA28T146 Overview
DC current gain in this device equals 10000 @ 100mA 5V, which is the ratio of the base current to the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.5V @ 100μA, 100mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 12V.Parts of this part have transition frequencies of 200MHz.A breakdown input voltage of 80V volts can be used.During maximum operation, collector current can be as low as 300mA volts.
MMSTA28T146 Features
the DC current gain for this device is 10000 @ 100mA 5V the vce saturation(Max) is 1.5V @ 100μA, 100mA the emitter base voltage is kept at 12V a transition frequency of 200MHz
MMSTA28T146 Applications
There are a lot of ROHM Semiconductor MMSTA28T146 applications of single BJT transistors.