MPSW55G Overview
In this device, the DC current gain is 50 @ 250mA 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 10mA, 250mA.The emitter base voltage can be kept at 4V for high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).A transition frequency of 50MHz is present in the part.During maximum operation, collector current can be as low as 500mA volts.
MPSW55G Features
the DC current gain for this device is 50 @ 250mA 1V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 10mA, 250mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSW55G Applications
There are a lot of ON Semiconductor MPSW55G applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
