MSD1328-RT1G Overview
In this device, the DC current gain is 200 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 20mA, 500mA.A 20V maximal voltage - Collector Emitter Breakdown is present in the device.
MSD1328-RT1G Features
the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 400mV @ 20mA, 500mA
MSD1328-RT1G Applications
There are a lot of Rochester Electronics, LLC MSD1328-RT1G applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
