APT13003DZTR-G1 Overview
This device has a DC current gain of 5 @ 1A 2V, which is the ratio between the collector current and the base current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.When VCE saturation is 400mV @ 250mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 9V can result in a high level of efficiency.This device can take an input voltage of 450V volts before it breaks down.Product comes in TO-92 supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.A maximum collector current of 1.5A volts is possible.
APT13003DZTR-G1 Features
the DC current gain for this device is 5 @ 1A 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 250mA, 1A
the emitter base voltage is kept at 9V
the supplier device package of TO-92
APT13003DZTR-G1 Applications
There are a lot of Diodes Incorporated APT13003DZTR-G1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting