BC817-16-7-F Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.The part has a transition frequency of 100MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.When collector current reaches its maximum, it can reach 800mA volts.

BC817-16-7-F Features

the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC817-16-7-F Applications

There are a lot of Diodes Incorporated BC817-16-7-F applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver