KSD1691GS Overview
In this device, the DC current gain is 200 @ 2A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 100mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 200mA, 2A.An emitter's base voltage can be kept at 7V to gain high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (5A).In the part, the transition frequency is 3MHz.There is a breakdown input voltage of 60V volts that it can take.When collector current reaches its maximum, it can reach 5A volts.
KSD1691GS Features
the DC current gain for this device is 200 @ 2A 1V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 3MHz
KSD1691GS Applications
There are a lot of ON Semiconductor KSD1691GS applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
