2N5655G Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 100mA 10mV.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 10V @ 100mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.As you can see, the part has a transition frequency of 10MHz.A maximum collector current of 500mA volts can be achieved.

2N5655G Features

the DC current gain for this device is 30 @ 100mA 10mV
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 10V @ 100mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 10MHz

2N5655G Applications

There are a lot of ON Semiconductor 2N5655G applications of single BJT transistors.

• Inverter
• Muting
• Interface
• Driver