2SA1362-GR,LF

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Manufacturer part number:2SA1362-GR,LF

Manufacturer:Toshiba Semiconductor and Storage

Description:2SA1362-GR,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website

Case Package:SOT-23

Datasheet:2SA1362-GR,LF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power - Max	200mW
Transistor Type	PNP
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 100mA 1V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	200mV @ 8mA, 400mA
Voltage - Collector Emitter Breakdown (Max)	15V
Current - Collector (Ic) (Max)	800mA
Frequency - Transition	120MHz
RoHS Status	Non-RoHS Compliant

Quantity	Unit Price	Ext. Price
1	$0.353000	$0.353
10	$0.333019	$3.33019
100	$0.314169	$31.4169
500	$0.296386	$148.193
1000	$0.279609	$279.609

2SA1362-GR,LF Overview

In this device, the DC current gain is 200 @ 100mA 1V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).There is a 15V maximal voltage in the device due to collector-emitter breakdown.