KSB834WYTM Overview

In this device, the DC current gain is 100 @ 5mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -500mV allows maximum design flexibility.A VCE saturation (Max) of 1V @ 300mA, 3A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at -7V can result in a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3A for this device.As a result, the part has a transition frequency of 9MHz.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 3A volts at its maximum.

KSB834WYTM Features

the DC current gain for this device is 100 @ 5mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 1V @ 300mA, 3A
the emitter base voltage is kept at -7V
the current rating of this device is -3A
a transition frequency of 9MHz

KSB834WYTM Applications

There are a lot of ON Semiconductor KSB834WYTM applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter