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BC817-40-7

BC817-40-7

BC817-40-7

Diodes Incorporated

BC817-40-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

BC817-40-7 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e0
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn85Pb15)
Subcategory Other Transistors
Max Power Dissipation 310mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 235
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) 10
Base Part Number BC817
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power - Max 310mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 700mV
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Emitter Base Voltage (VEBO) 5V
hFE Min 250
Height 1mm
Length 3.05mm
Width 1.4mm
REACH SVHC No SVHC
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.047621 $0.047621
500 $0.035015 $17.5075
1000 $0.029179 $29.179
2000 $0.026770 $53.54
5000 $0.025019 $125.095
10000 $0.023273 $232.73
15000 $0.022508 $337.62
50000 $0.022132 $1106.6
BC817-40-7 Product Details

BC817-40-7 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 100mA 1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.In this part, there is a transition frequency of 100MHz.There is a breakdown input voltage of 45V volts that it can take.A maximum collector current of 800mA volts is possible.

BC817-40-7 Features


the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC817-40-7 Applications


There are a lot of Diodes Incorporated BC817-40-7 applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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