BC817-40W-7 Overview
In this device, the DC current gain is 250 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 700mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.In the part, the transition frequency is 100MHz.There is a breakdown input voltage of 45V volts that it can take.A maximum collector current of 500mA volts is possible.
BC817-40W-7 Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC817-40W-7 Applications
There are a lot of Diodes Incorporated BC817-40W-7 applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
