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KSC1623LMTF

KSC1623LMTF

KSC1623LMTF

ON Semiconductor

KSC1623LMTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSC1623LMTF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 30mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 50V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 100mA
Frequency 250MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number KSC1623
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 200mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 250MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Transition Frequency 250MHz
Collector Emitter Saturation Voltage 150mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 90
Height 970μm
Length 2.9mm
Width 1.3mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.03847 $0.11541
6,000 $0.03482 $0.20892
15,000 $0.03044 $0.4566
30,000 $0.02752 $0.8256
75,000 $0.02460 $1.845
150,000 $0.02071 $3.1065
KSC1623LMTF Product Details

KSC1623LMTF Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 1mA 6V.The collector emitter saturation voltage is 150mV, giving you a wide variety of design options.A VCE saturation (Max) of 300mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.There is a transition frequency of 250MHz in the part.The breakdown input voltage is 50V volts.The maximum collector current is 100mA volts.

KSC1623LMTF Features


the DC current gain for this device is 300 @ 1mA 6V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 250MHz

KSC1623LMTF Applications


There are a lot of ON Semiconductor KSC1623LMTF applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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