KSC1623LMTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSC1623LMTF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 2 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
50V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
100mA
Frequency
250MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
KSC1623
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
200mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
250MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 1mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
250MHz
Collector Emitter Saturation Voltage
150mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
90
Height
970μm
Length
2.9mm
Width
1.3mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.03847
$0.11541
6,000
$0.03482
$0.20892
15,000
$0.03044
$0.4566
30,000
$0.02752
$0.8256
75,000
$0.02460
$1.845
150,000
$0.02071
$3.1065
KSC1623LMTF Product Details
KSC1623LMTF Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 1mA 6V.The collector emitter saturation voltage is 150mV, giving you a wide variety of design options.A VCE saturation (Max) of 300mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.There is a transition frequency of 250MHz in the part.The breakdown input voltage is 50V volts.The maximum collector current is 100mA volts.
KSC1623LMTF Features
the DC current gain for this device is 300 @ 1mA 6V a collector emitter saturation voltage of 150mV the vce saturation(Max) is 300mV @ 10mA, 100mA the emitter base voltage is kept at 5V the current rating of this device is 100mA a transition frequency of 250MHz
KSC1623LMTF Applications
There are a lot of ON Semiconductor KSC1623LMTF applications of single BJT transistors.