PMBTA45,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PMBTA45,215 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Tolerance
5%
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Axial
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
35MHz
Base Part Number
PMBTA45
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Transistor Application
SWITCHING
Test Current
20mA
Gain Bandwidth Product
35MHz
Polarity/Channel Type
NPN
Zener Voltage
12V
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
500V
Max Collector Current
150mA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 50mA 10V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
90mV @ 6mA, 50mA
Collector Emitter Breakdown Voltage
500V
Transition Frequency
35MHz
Max Breakdown Voltage
500V
Collector Base Voltage (VCBO)
500V
Emitter Base Voltage (VEBO)
6V
hFE Min
50
Outside Diameter
2.6 mm
Zener Current
500mA
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.238404
$0.238404
10
$0.224910
$2.2491
100
$0.212179
$21.2179
500
$0.200169
$100.0845
1000
$0.188838
$188.838
PMBTA45,215 Product Details
PMBTA45,215 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 50mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 90mV @ 6mA, 50mA.The emitter base voltage can be kept at 6V for high efficiency.A transition frequency of 35MHz is present in the part.This device can take an input voltage of 500V volts before it breaks down.Single BJT transistor is possible for the collector current to fall as low as 150mA volts at Single BJT transistors maximum.
PMBTA45,215 Features
the DC current gain for this device is 50 @ 50mA 10V the vce saturation(Max) is 90mV @ 6mA, 50mA the emitter base voltage is kept at 6V a transition frequency of 35MHz
PMBTA45,215 Applications
There are a lot of Nexperia USA Inc. PMBTA45,215 applications of single BJT transistors.