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PMBTA45,215

PMBTA45,215

PMBTA45,215

Nexperia USA Inc.

PMBTA45,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PMBTA45,215 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Tolerance 5%
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Axial
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Frequency 35MHz
Base Part Number PMBTA45
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 300mW
Transistor Application SWITCHING
Test Current 20mA
Gain Bandwidth Product 35MHz
Polarity/Channel Type NPN
Zener Voltage 12V
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500V
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 50mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 90mV @ 6mA, 50mA
Collector Emitter Breakdown Voltage 500V
Transition Frequency 35MHz
Max Breakdown Voltage 500V
Collector Base Voltage (VCBO) 500V
Emitter Base Voltage (VEBO) 6V
hFE Min 50
Outside Diameter 2.6 mm
Zener Current 500mA
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.238404 $0.238404
10 $0.224910 $2.2491
100 $0.212179 $21.2179
500 $0.200169 $100.0845
1000 $0.188838 $188.838
PMBTA45,215 Product Details

PMBTA45,215 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 50mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 90mV @ 6mA, 50mA.The emitter base voltage can be kept at 6V for high efficiency.A transition frequency of 35MHz is present in the part.This device can take an input voltage of 500V volts before it breaks down.Single BJT transistor is possible for the collector current to fall as low as 150mA volts at Single BJT transistors maximum.

PMBTA45,215 Features


the DC current gain for this device is 50 @ 50mA 10V
the vce saturation(Max) is 90mV @ 6mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 35MHz

PMBTA45,215 Applications


There are a lot of Nexperia USA Inc. PMBTA45,215 applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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