MJE3055TG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MJE3055TG Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 hours ago)
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2003
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
60V
Max Power Dissipation
75W
Peak Reflow Temperature (Cel)
260
Current Rating
10A
Frequency
2MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MJE3055
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
75W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
2MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 4A 4V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
8V @ 3.3A, 10A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
2MHz
Collector Emitter Saturation Voltage
1.1V
Collector Base Voltage (VCBO)
70V
Emitter Base Voltage (VEBO)
5V
hFE Min
20
Height
15.748mm
Length
10.2616mm
Width
4.826mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.97000
$0.97
50
$0.80720
$40.36
100
$0.66270
$66.27
500
$0.52846
$264.23
1,000
$0.42710
$0.4271
MJE3055TG Product Details
MJE3055TG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 4A 4V.The collector emitter saturation voltage is 1.1V, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 10A for this device.As you can see, the part has a transition frequency of 2MHz.The maximum collector current is 10A volts.
MJE3055TG Features
the DC current gain for this device is 20 @ 4A 4V a collector emitter saturation voltage of 1.1V the vce saturation(Max) is 8V @ 3.3A, 10A the emitter base voltage is kept at 5V the current rating of this device is 10A a transition frequency of 2MHz
MJE3055TG Applications
There are a lot of ON Semiconductor MJE3055TG applications of single BJT transistors.