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MJE3055TG

MJE3055TG

MJE3055TG

ON Semiconductor

MJE3055TG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJE3055TG Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 hours ago)
Mounting Type Through Hole
Package / Case TO-220-3
Surface MountNO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation75W
Peak Reflow Temperature (Cel) 260
Current Rating10A
Frequency 2MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MJE3055
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation75W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product2MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 4V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A
Collector Emitter Breakdown Voltage60V
Transition Frequency 2MHz
Collector Emitter Saturation Voltage1.1V
Collector Base Voltage (VCBO) 70V
Emitter Base Voltage (VEBO) 5V
hFE Min 20
Height 15.748mm
Length 10.2616mm
Width 4.826mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:8290 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.97000$0.97
50$0.80720$40.36
100$0.66270$66.27
500$0.52846$264.23

MJE3055TG Product Details

MJE3055TG Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 4A 4V.The collector emitter saturation voltage is 1.1V, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 10A for this device.As you can see, the part has a transition frequency of 2MHz.The maximum collector current is 10A volts.

MJE3055TG Features


the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 2MHz

MJE3055TG Applications


There are a lot of ON Semiconductor MJE3055TG applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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