BC857B-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
BC857B-7-F Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
200MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BC857B
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
310mW
Transistor Application
SWITCHING
Gain Bandwidth Product
200MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
-45V
Max Collector Current
-100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
-45V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
-250mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
-50V
Emitter Base Voltage (VEBO)
-5V
hFE Min
220
Max Junction Temperature (Tj)
150°C
Height
1.1mm
Length
3.05mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.03741
$0.11223
6,000
$0.03400
$0.204
15,000
$0.02990
$0.4485
30,000
$0.02717
$0.8151
75,000
$0.02444
$1.833
150,000
$0.02080
$3.12
BC857B-7-F Product Details
BC857B-7-F Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 220 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -250mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.There is a transition frequency of 200MHz in the part.Input voltage breakdown is available at 45V volts.When collector current reaches its maximum, it can reach -100mA volts.
BC857B-7-F Features
the DC current gain for this device is 220 @ 2mA 5V a collector emitter saturation voltage of -250mV the vce saturation(Max) is 650mV @ 5mA, 100mA the emitter base voltage is kept at -5V a transition frequency of 200MHz
BC857B-7-F Applications
There are a lot of Diodes Incorporated BC857B-7-F applications of single BJT transistors.