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BC857B-7-F

BC857B-7-F

BC857B-7-F

Diodes Incorporated

BC857B-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

BC857B-7-F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 19 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 200MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BC857B
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 310mW
Transistor Application SWITCHING
Gain Bandwidth Product 200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) -45V
Max Collector Current -100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage -45V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 200MHz
Collector Emitter Saturation Voltage -250mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) -50V
Emitter Base Voltage (VEBO) -5V
hFE Min 220
Max Junction Temperature (Tj) 150°C
Height 1.1mm
Length 3.05mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.03741 $0.11223
6,000 $0.03400 $0.204
15,000 $0.02990 $0.4485
30,000 $0.02717 $0.8151
75,000 $0.02444 $1.833
150,000 $0.02080 $3.12
BC857B-7-F Product Details

BC857B-7-F Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 220 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -250mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.There is a transition frequency of 200MHz in the part.Input voltage breakdown is available at 45V volts.When collector current reaches its maximum, it can reach -100mA volts.

BC857B-7-F Features


the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 200MHz

BC857B-7-F Applications


There are a lot of Diodes Incorporated BC857B-7-F applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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