BC857BFZ-7B Overview
This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 5mA, 100mA.Maintaining the continuous collector voltage at -100mA is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.As you can see, the part has a transition frequency of 270MHz.Breakdown input voltage is 45V volts.A maximum collector current of 100mA volts is possible.
BC857BFZ-7B Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 500mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 270MHz
BC857BFZ-7B Applications
There are a lot of Diodes Incorporated BC857BFZ-7B applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
