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BC857BFZ-7B

BC857BFZ-7B

BC857BFZ-7B

Diodes Incorporated

BC857BFZ-7B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

BC857BFZ-7B Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Max Power Dissipation 435mW
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Power - Max 435mW
Gain Bandwidth Product 200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 270MHz
Collector Emitter Saturation Voltage -250mV
Max Breakdown Voltage 45V
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) -50V
Emitter Base Voltage (VEBO) -5V
hFE Min 220
Continuous Collector Current -100mA
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
10,000 $0.15043 $1.5043
BC857BFZ-7B Product Details

BC857BFZ-7B Overview


This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 5mA, 100mA.Maintaining the continuous collector voltage at -100mA is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.As you can see, the part has a transition frequency of 270MHz.Breakdown input voltage is 45V volts.A maximum collector current of 100mA volts is possible.

BC857BFZ-7B Features


the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 500mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 270MHz

BC857BFZ-7B Applications


There are a lot of Diodes Incorporated BC857BFZ-7B applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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