BC857BFZ-7B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
BC857BFZ-7B Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-XFDFN
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2015
JESD-609 Code
e4
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Max Power Dissipation
435mW
Terminal Position
BOTTOM
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
435mW
Gain Bandwidth Product
200MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
270MHz
Collector Emitter Saturation Voltage
-250mV
Max Breakdown Voltage
45V
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
-50V
Emitter Base Voltage (VEBO)
-5V
hFE Min
220
Continuous Collector Current
-100mA
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10,000
$0.15043
$1.5043
BC857BFZ-7B Product Details
BC857BFZ-7B Overview
This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 5mA, 100mA.Maintaining the continuous collector voltage at -100mA is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.As you can see, the part has a transition frequency of 270MHz.Breakdown input voltage is 45V volts.A maximum collector current of 100mA volts is possible.
BC857BFZ-7B Features
the DC current gain for this device is 200 @ 2mA 5V a collector emitter saturation voltage of -250mV the vce saturation(Max) is 500mV @ 5mA, 100mA the emitter base voltage is kept at -5V a transition frequency of 270MHz
BC857BFZ-7B Applications
There are a lot of Diodes Incorporated BC857BFZ-7B applications of single BJT transistors.