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MJE702G

MJE702G

MJE702G

ON Semiconductor

MJE702G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJE702G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature BUILT IN BIAS RESISTOR
Subcategory Other Transistors
Voltage - Rated DC -80V
Max Power Dissipation 40W
Peak Reflow Temperature (Cel) 260
Current Rating -4A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MJE702
Pin Count 3
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 40W
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A 3V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 1MHz
Collector Emitter Saturation Voltage 2.5V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 100
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.648898 $2.648898
10 $2.498960 $24.9896
100 $2.357509 $235.7509
500 $2.224066 $1112.033
1000 $2.098175 $2098.175
MJE702G Product Details

MJE702G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 1.5A 3V DC current gain.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 30mA, 1.5A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.The current rating of this fuse is -4A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.A transition frequency of 1MHz is present in the part.Maximum collector currents can be below 4A volts.

MJE702G Features


the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 1MHz

MJE702G Applications


There are a lot of ON Semiconductor MJE702G applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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