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MJD32CG

MJD32CG

MJD32CG

ON Semiconductor

MJD32CG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJD32CG Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -100V
Max Power Dissipation 1.56W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -3A
Frequency 3MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MJD32
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 1.56W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 3MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A 4V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage 1.2V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 25
Height 2.3876mm
Length 6.7056mm
Width 6.223mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.72000 $0.72
500 $0.7128 $356.4
1000 $0.7056 $705.6
1500 $0.6984 $1047.6
2000 $0.6912 $1382.4
2500 $0.684 $1710
MJD32CG Product Details

MJD32CG Overview


This device has a DC current gain of 10 @ 3A 4V, which is the ratio between the collector current and the base current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.2V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.2V @ 375mA, 3A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.The current rating of this fuse is -3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Parts of this part have transition frequencies of 3MHz.A maximum collector current of 3A volts is possible.

MJD32CG Features


the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz

MJD32CG Applications


There are a lot of ON Semiconductor MJD32CG applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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