BC857C-7-F Overview

In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of -650mV, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.This device has a current rating of -100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In this part, there is a transition frequency of 200MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.

BC857C-7-F Features

the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 200MHz

BC857C-7-F Applications

There are a lot of Diodes Incorporated BC857C-7-F applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface