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BC858AW-7-F

BC858AW-7-F

BC858AW-7-F

Diodes Incorporated

BC858AW-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

BC858AW-7-F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 19 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 6.010099mg
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 200MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BC858
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Gain Bandwidth Product 200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 30V
Transition Frequency 200MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 5V
hFE Min 125
Height 1mm
Length 2.2mm
Width 1.35mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.279360 $3.27936
10 $3.093736 $30.93736
100 $2.918619 $291.8619
500 $2.753414 $1376.707
1000 $2.597560 $2597.56
BC858AW-7-F Product Details

BC858AW-7-F Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 125 @ 2mA 5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.The maximum collector current is 100mA volts.

BC858AW-7-F Features


the DC current gain for this device is 125 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz

BC858AW-7-F Applications


There are a lot of Diodes Incorporated BC858AW-7-F applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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