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BCP53TA

BCP53TA

BCP53TA

Diodes Incorporated

BCP53TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

BCP53TA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingCut Tape (CT)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional FeatureHIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC -80V
Max Power Dissipation2W
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-1A
Frequency 150MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BCP53
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Power Dissipation2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product150MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage80V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage500mV
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
Height 1.65mm
Length 6.55mm
Width 3.55mm
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:15259 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.757010$0.75701
10$0.714160$7.1416
100$0.673736$67.3736
500$0.635600$317.8
1000$0.599623$599.623

BCP53TA Product Details

BCP53TA Overview


This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).In the part, the transition frequency is 150MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.A maximum collector current of 1A volts can be achieved.

BCP53TA Features


the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 150MHz

BCP53TA Applications


There are a lot of Diodes Incorporated BCP53TA applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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