BCP53TA Overview

This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).In the part, the transition frequency is 150MHz.Single BJT transistor can take a breakdown input voltage of 80V volts.A maximum collector current of 1A volts can be achieved.

BCP53TA Features

the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 150MHz

BCP53TA Applications

There are a lot of Diodes Incorporated BCP53TA applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter