BC337-40ZL1G Overview
In this device, the DC current gain is 250 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 700mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.This device has a current rating of 800mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.There is a transition frequency of 210MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.A maximum collector current of 800mA volts is possible.
BC337-40ZL1G Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 210MHz
BC337-40ZL1G Applications
There are a lot of ON Semiconductor BC337-40ZL1G applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
