BCX5410TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 63 @ 150mA 2V.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).The emitter base voltage can be kept at 5V for high efficiency.There is a transition frequency of 150MHz in the part.Single BJT transistor can take a breakdown input voltage of 45V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
BCX5410TA Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCX5410TA Applications
There are a lot of Diodes Incorporated BCX5410TA applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
