BCX5516TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
BCX5516TA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Additional Feature
HIGH RELIABILITY
Voltage - Rated DC
60V
Max Power Dissipation
1W
Terminal Form
FLAT
Current Rating
1A
Frequency
150MHz
Base Part Number
BCX5516
Pin Count
3
JESD-30 Code
R-PSSO-F3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
60V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
Collector-Base Capacitance-Max
25pF
Height
1.6mm
Length
4.6mm
Width
2.6mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$0.10460
$0.1046
2,000
$0.09200
$0.184
5,000
$0.08360
$0.418
10,000
$0.07520
$0.752
25,000
$0.07100
$1.775
50,000
$0.06400
$3.2
BCX5516TA Product Details
BCX5516TA Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).The part has a transition frequency of 150MHz.There is a breakdown input voltage of 60V volts that it can take.A maximum collector current of 1A volts is possible.
BCX5516TA Features
the DC current gain for this device is 100 @ 150mA 2V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 50mA, 500mA the emitter base voltage is kept at 5V the current rating of this device is 1A a transition frequency of 150MHz
BCX5516TA Applications
There are a lot of Diodes Incorporated BCX5516TA applications of single BJT transistors.