BD140-16 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
BD140-16 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 6 months ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Transistor Element Material
SILICON
Manufacturer Package Identifier
SOT-32-0016114E
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
1.25W
Base Part Number
BD140
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.25W
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
-80V
Max Collector Current
-3A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 2V 150MA
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Current - Collector (Ic) (Max)
1.5A
Transition Frequency
75MHz
Collector Emitter Saturation Voltage
-500mV
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
-80V
Emitter Base Voltage (VEBO)
-5V
hFE Min
25
Max Junction Temperature (Tj)
150°C
Height
13.2mm
Length
7.8mm
Width
2.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.46000
$0.46
50
$0.33780
$16.89
100
$0.25130
$25.13
500
$0.18850
$94.25
1,000
$0.14137
$0.14137
2,500
$0.12959
$0.25918
5,000
$0.12174
$0.6087
BD140-16 Product Details
BD140-16 Overview
DC current gain in this device equals 40 @ 2V 150MA, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.There is a transition frequency of 75MHz in the part.Single BJT transistor can take a breakdown input voltage of 80V volts.Collector current can be as low as -3A volts at its maximum.
BD140-16 Features
the DC current gain for this device is 40 @ 2V 150MA a collector emitter saturation voltage of -500mV the vce saturation(Max) is 500mV @ 50mA, 500mA the emitter base voltage is kept at -5V a transition frequency of 75MHz
BD140-16 Applications
There are a lot of STMicroelectronics BD140-16 applications of single BJT transistors.