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BD140-16

BD140-16

BD140-16

STMicroelectronics

BD140-16 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

SOT-23

BD140-16 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 months ago)
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Transistor Element Material SILICON
Manufacturer Package Identifier SOT-32-0016114E
Operating Temperature150°C TJ
PackagingTube
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation1.25W
Base Part Number BD140
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1.25W
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) -80V
Max Collector Current -3A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2V 150MA
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage80V
Current - Collector (Ic) (Max) 1.5A
Transition Frequency 75MHz
Collector Emitter Saturation Voltage-500mV
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) -5V
hFE Min 25
Max Junction Temperature (Tj) 150°C
Height 13.2mm
Length 7.8mm
Width 2.7mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:16476 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.46000$0.46
50$0.33780$16.89
100$0.25130$25.13
500$0.18850$94.25

BD140-16 Product Details

BD140-16 Overview


DC current gain in this device equals 40 @ 2V 150MA, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.There is a transition frequency of 75MHz in the part.Single BJT transistor can take a breakdown input voltage of 80V volts.Collector current can be as low as -3A volts at its maximum.

BD140-16 Features


the DC current gain for this device is 40 @ 2V 150MA
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 75MHz

BD140-16 Applications


There are a lot of STMicroelectronics BD140-16 applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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