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MMBT2369A

MMBT2369A

MMBT2369A

ON Semiconductor

MMBT2369A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MMBT2369A Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 39 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature HIGH SPEED SATURATED SWITCHING
HTS Code 8541.21.00.95
Subcategory Other Transistors
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MMBT2369
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 225mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA 1V
Current - Collector Cutoff (Max) 400nA ICBO
JEDEC-95 Code TO-236AB
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 15V
Current - Collector (Ic) (Max) 200mA
Transition Frequency 500MHz
Power Dissipation-Max (Abs) 0.35W
Turn Off Time-Max (toff) 18ns
Turn On Time-Max (ton) 12ns
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.03000 $0.03
500 $0.0297 $14.85
1000 $0.0294 $29.4
1500 $0.0291 $43.65
2000 $0.0288 $57.6
2500 $0.0285 $71.25
MMBT2369A Product Details

MMBT2369A Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 10mA 1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 10mA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 500MHz.Collector Emitter Breakdown occurs at 15VV - Maximum voltage.

MMBT2369A Features


the DC current gain for this device is 40 @ 10mA 1V
the vce saturation(Max) is 500mV @ 10mA, 100mA
a transition frequency of 500MHz

MMBT2369A Applications


There are a lot of ON Semiconductor MMBT2369A applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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