MMBT2369A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MMBT2369A Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
39 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
HIGH SPEED SATURATED SWITCHING
HTS Code
8541.21.00.95
Subcategory
Other Transistors
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
MMBT2369
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
225mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA 1V
Current - Collector Cutoff (Max)
400nA ICBO
JEDEC-95 Code
TO-236AB
Vce Saturation (Max) @ Ib, Ic
500mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
15V
Current - Collector (Ic) (Max)
200mA
Transition Frequency
500MHz
Power Dissipation-Max (Abs)
0.35W
Turn Off Time-Max (toff)
18ns
Turn On Time-Max (ton)
12ns
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.03000
$0.03
500
$0.0297
$14.85
1000
$0.0294
$29.4
1500
$0.0291
$43.65
2000
$0.0288
$57.6
2500
$0.0285
$71.25
MMBT2369A Product Details
MMBT2369A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 10mA 1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 10mA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 500MHz.Collector Emitter Breakdown occurs at 15VV - Maximum voltage.
MMBT2369A Features
the DC current gain for this device is 40 @ 10mA 1V the vce saturation(Max) is 500mV @ 10mA, 100mA a transition frequency of 500MHz
MMBT2369A Applications
There are a lot of ON Semiconductor MMBT2369A applications of single BJT transistors.