BFN38E6327HTSA1 Overview
DC current gain in this device equals 30 @ 30mA 10V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.The emitter base voltage can be kept at 5V for high efficiency.A transition frequency of 70MHz is present in the part.When collector current reaches its maximum, it can reach 200mA volts.
BFN38E6327HTSA1 Features
the DC current gain for this device is 30 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
a transition frequency of 70MHz
BFN38E6327HTSA1 Applications
There are a lot of Infineon Technologies BFN38E6327HTSA1 applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
