BST52TA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 150mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.3V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.3V @ 500μA, 500mA.Continuous collector voltage should be kept at 500mA for high efficiency.Keeping the emitter base voltage at 10V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).The part has a transition frequency of 150MHz.Input voltage breakdown is available at 80V volts.The maximum collector current is 500mA volts.
BST52TA Features
the DC current gain for this device is 1000 @ 150mA 10V
a collector emitter saturation voltage of 1.3V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 150MHz
BST52TA Applications
There are a lot of Diodes Incorporated BST52TA applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
